to ? 92 1.emitter 2.collector 3.base to-92 plastic-encapsulate transistors KTC3194 transistor (npn) features z general purpose switching application maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma ,i e =0 40 v collector-emitter breakdown voltage v (br) ceo i c =1ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 4 v collector cut-off current i cbo v cb =40v,i e =0 0.5 a emitter cut-off current i ebo v eb =4v,i c =0 0.5 a dc current gain h fe v ce =6v, i c =1ma 40 200 collector-emitter saturation voltage v ce(sat) i c =15ma,i b =1.5ma 0.2 v transition frequency f t v ce =6v,i c =1ma 550 mhz classification of h fe rank r o y range 40-80 70-140 100-200 symbo parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 4 v i c collector current 0.02 a p c collector power dissipation 0.625 w r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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